PART |
Description |
Maker |
CY7C1415BV18-250BZI CY7C1415BV18-167BZI |
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165 36-Mbit QDR™-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR-II SRAM 4-Word Burst Architecture 18-Mbit DDR-II SRAM 2-Word Burst Architecture 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR-II SRAM 4-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM 256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc. Electronic Theatre Controls, Inc.
|
CY7C1425AV18 CY7C1414AV18-167BZI CY7C1414AV18-167B |
36-Mbit QDR-II SRAM 2-Word Burst Architecture 36-Mb QDR-II SRAM2-Word Burst结构36-Mb QDR-II SRAM2-Word Burst结构 36 - MB的QDR - II型的SRAM2字突发结构)6 - MB的QDR - II型的SRAM2字突发结构)
|
Cypress Semiconductor Corp.
|
CY7C1412V18-200BZCES CY7C1414V18-200BZCES CY7C1410 |
36-Mbit QDR-II SRAM 2-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1294DV18-167BZC CY7C1294DV18-167BZI CY7C1294DV |
9-Mbit QDR- II垄芒 SRAM 2-Word Burst Architecture 9-Mbit QDR- II SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
R1Q2A3609 R1Q2A3636 R1Q2A3618 R1Q2A3609ABG-60R R1Q |
36-Mbit QDRII SRAM 2-word Burst 36-Mbit QDR™II SRAM 2-word Burst
|
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
CY7C1526V18-167BZC CY7C1511V18-167BZC CY7C1513V18- |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 167 MHz. 72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz.
|
Cypress
|
CY7C1426AV18-300BZXI CY7C1426AV18-200BZXC CY7C1426 |
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture 36-Mbit QDR??II SRAM 4-Word Burst Architecture 36-Mbit QDR?II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1511V18-250BZC CY7C1511V18-167BZC |
72-Mbit QDRII SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1565V18-300BZI |
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|